journal

2025

• Channel-Boosted Electrochemical RAM With a-IGZO TFT for Highly Accurate and Energy-Efficient Neural Network Computation

• Unveiling ECRAM switching mechanisms using variable temperature Hall measurements for accelerated AI computation

2024

• Design Strategies of Capacitor-Based Synaptic Cell for High-Efficiency Analog Neural Network Training

• A Multi-bit ECRAM-Based Analog Neuromorphic System with High-Precision Current Readout Achieving 97.3% Inference Accuracy

• Device Specifications for Neural Network Training with Analog Resistive Cross-Point Arrays Using Tiki-Taka Algorithms

• Attojoule Hexagonal Boron Nitride-Based Memristor for High-Performance Neuromorphic Computing

• Retention-aware Zero-shifting Technique for Tiki-Taka Algorithm-based Analog Deep Learning Accelerator

• Verification of neuromorphic processing accuracy against non-ideal error in synapse-based neural network systems

• Electrochemical Random-Access Memory : Recent Advances in Materials, Devices, and Systems towards Neuromorphic Computing

2023

• WOx channel engineering of Cu-ion-driven synaptic transistor array for low-power neuromorphic computing 

• Accurate Weight Update in an Electrochemical Random-Access Memory Based Cross-Point Array Using Channel-High Half-Bias Scheme for Deep Learning Accelerator

• Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
  Min-Kyu Song, Ji-Hoon Kang, Xinyuan Zhang, Wonjae Ji, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Bowei Dong, Samarth Aggarwal, Weier Wan, Seok-Man Hong, Suma George Cardwell, Irem Boybat, Jae-sun Seo, Jang-Sik Lee, Mario Lanza, Hanwool Yeon, Murat Onen, Ju Li, Bilge Yildiz, Jesús A. del Alamo, Seyoung Kim, Shinhyun Choi, Gianluca Milano, Carlo Ricciardi, Lambert Alff, Yang Chai, Zhongrui Wang, Harish Bhaskaran, Mark C. Hersam, Dmitri Strukov, H.-S. Philip Wong, Ilia Valov, Bin Gao, Huaqiang Wu, Ronald Tetzlaff, Abu Sebastian, Wei Lu, Leon Chua, J. Joshua Yang, and Jeehwan Kim

2022

• Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self-Assembled Monolayer for High-Precision Neural Network Computation

• Vertical metal-oxide electrochemical memory for high-density synaptic array based high-performance neuromorphic computing

• Effect of Stochastic Resonance on Classification Accuracy of Neural Networks Utilizing Inherent Stochasticity in Threshold Voltage of Ovonic Threshold Switching Device

• Exploiting Read Current Noise of TiOx Resistive Memory by Controlling Forming Conditions for Probabilistic Neural Network Hardware

• Neural Network Training With Asymmetric Crosspoint Elements

• Impact of Asymmetric Weight Update on Neural Network Training with Tiki-Taka Algorithm

2021

• Experimental Measurement of Ungated Channel Region Conductance in a Multi-terminal, Metal Oxide-based ECRAM

• Improvement of Synaptic Properties in Oxygen-Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub-Stoichiometric Channels

• Elucidating Ionic Programming Dynamics of Metal-Oxide Electrochemical Memory for Neuromorphic Computing

• Excellent Synapse Characteristics of 50 nm Vertical Transistor with WOx Channel for High Density Neuromorphic System

• OTS-Based Analog-to-Stochastic Converter for Fully-Parallel Weight Update in Cross-Point Array Neural Networks

• Neural Network Training Acceleration with RRAM-Based Hybrid Synapses

• Impact of Operating Temperature on Pattern Recognition Accuracy of Resistive Array-Based Hardware Neural Networks

• Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training

2020

• PCMO-based three-terminal synapse for neuromorphic computing 

• Improved Pattern Recognition Accuracy of Hardware Neural Network: Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching (OTS)-based Fuse Device

• Alloying conducting channels for reliable neuromorphic computing

• Hardware and software co-optimization for the initialization failure of the ReRAM based cross-bar array

2019

• Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator

• Reliability Challenges with Materials for Analog Computing

• Zero-shifting Technique for Deep Neural Network Training on Resistive Cross-point Arrays

2018

• ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing

• Time-resolved conductance in electrochemical systems for neuromorphic computing 

• Capacitor-based Cross-point Array for Analog Neural Network with Record Symmetry and Linearity 

• Signal and noise extraction from analog memory elements for neuromorphic computing

2017

• Analog CMOS-based resistive processing unit for deep neural network training

• Neuromorphic computing using non-volatile memory

• Pulse Characterization of HfOx-Based RRAM for Resistive Processing Unit Application

• Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene 

2016

• CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond

2015

• Bio-Inspired Learning Demonstration with Synaptic Resistive Memory Devices

2014

• Resistive Switching and Temperature-dependent Transport in HfOx-based Resistive Memory Devices

• Temperature-dependent studies of the electrical properties and the conduction mechanism of HfOx-based RRAM 

2012

• Scaling of Al2O3 dielectric for graphene field-effect transistors

• Direct measurement of the Fermi energy in graphene using a double-layer heterostructure

• Coulomb drag and magnetotransport in graphene double layers

• Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition

2011

• Spin-polarized to valley-polarized transition in graphene bilayers at nu=0 in high magnetic fields

• Coulomb Drag in Independently Contacted Graphene Bilayers

• Gate capacitance scaling and graphene field-effect transistors with ultra-thin top-gate dielectrics

• Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: Evidence for Bernal stacking

• Dielectric thickness dependence of carrier mobility in graphene with Al2O3 and HfO2 top dielectrics

• Coulomb drag of massless fermions in graphene

• Dielectric Deposition and Electron Transport in Graphene Devices with High-k Dielectrics

• Electric field induced transition between spin to valley polarized nu=0 quantum Hall state in dual-gat

• Tunneling between two independently contacted graphene layers

2010

• Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

• Thickness dependence of carrier mobility in mono-and bi-layer graphene with HfO2 gate dielectric

• Graphene for CMOS and beyond CMOS applications

• Low-frequency acoustic phonon temperature distribution in electrically biased graphene

2009

• Large-area synthesis of high-quality and uniform graphene films on copper foils

• Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

• Epitaxial Growth and Characterization of Void-Free 3C-SiC Films on Germanium-Modified Si Substrate

• High-k dielectrics for Ge, III-V and graphene MOSFETs

• High-Mobility Dual-gated Graphene Field-Effect Transistors with Al2O3 Dielectric